AP6679GS MOSFET Transistor

The AP6679GS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6679GS transistor as follows.

AP6679GS Transistor Specification

Transistor Code		AP6679GS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	89W
Drain-Source Capacitance		960pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		3V

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