AP6679GJ MOSFET Transistor

The AP6679GJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6679GJ transistor as follows.

AP6679GJ Transistor Specification

Transistor Code		AP6679GJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	89W
Drain-Source Capacitance		960pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		3V

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