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AP6679GI-HF MOSFET Transistor

The AP6679GI-HF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6679GI-HF transistor as follows.

Circuit diagram symbol of the AP6679GI-HF transistor

AP6679GI-HF Transistor Specification

Transistor Code AP6679GI-HF
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 48A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.009Ohm
Power Dissipation (Maximum) PD 31.3W
Drain-Source Capacitance 930pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 75nS
Total Gate Charge 40nC

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