AP6679BGJ MOSFET Transistor

The AP6679BGJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6679BGJ transistor as follows.

AP6679BGJ Transistor Specification

Transistor Code		AP6679BGJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	63A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	54.3W
Drain-Source Capacitance		520pF
Rise Time		67nS
Gate-Threshold Voltage (Maximum)		3V

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