AP65WN770IN MOSFET Transistor

The AP65WN770IN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65WN770IN transistor as follows.

AP65WN770IN Transistor Specification

Transistor Code		AP65WN770IN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F-NL
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.77Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		4V

UXPython is not the creator or an official representative of the AP65WN770IN MOSFET transistor. You can download the official AP65WN770IN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

AP60SL600AIN MOSFET Transistor AP60WN720IN MOSFET Transistor AP60AN750IN MOSFET Transistor AP60N2R5IN MOSFET Transistor AP50WN270IN MOSFET Transistor AP65SL600AIN MOSFET Transistor AP65SL380AIN MOSFET Transistor AP60WN1K2IN MOSFET Transistor AP4604IN MOSFET Transistor AP65SL190AIN MOSFET Transistor AP60SL280AIN MOSFET Transistor AP6N3R5LIN MOSFET Transistor AP10N012IN MOSFET Transistor