AP65WN470I MOSFET Transistor

The AP65WN470I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65WN470I transistor as follows.

AP65WN470I Transistor Specification

Transistor Code		AP65WN470I
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.47Ohm
Power Dissipation (Maximum)	PD	41.6W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		57nS
Gate-Threshold Voltage (Maximum)		4V

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