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AP65WN2K3L MOSFET Transistor

The AP65WN2K3L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65WN2K3L transistor as follows.

Circuit diagram symbol of the AP65WN2K3L transistor

AP65WN2K3L Transistor Specification

Transistor Code AP65WN2K3L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO126F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.29Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 35pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 4V

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