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AP65WN1K0I MOSFET Transistor

The AP65WN1K0I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65WN1K0I transistor as follows.

Circuit diagram symbol of the AP65WN1K0I transistor

AP65WN1K0I Transistor Specification

Transistor Code AP65WN1K0I
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 34.7W
Drain-Source Capacitance 59pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 4V

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