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AP65SL190DWL MOSFET Transistor

The AP65SL190DWL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65SL190DWL transistor as follows.

Circuit diagram symbol of the AP65SL190DWL transistor

AP65SL190DWL Transistor Specification

Transistor Code AP65SL190DWL
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.19Ohm
Power Dissipation (Maximum) PD 147W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19nS
Gate-Threshold Voltage (Maximum) 5V

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