AP65SL190DI MOSFET Transistor

The AP65SL190DI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65SL190DI transistor as follows.

AP65SL190DI Transistor Specification

Transistor Code		AP65SL190DI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	34.7W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		5V

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