AP65SL190AIN MOSFET Transistor

The AP65SL190AIN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65SL190AIN transistor as follows.

AP65SL190AIN Transistor Specification

Transistor Code		AP65SL190AIN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F-NL
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	34.7W
Drain-Source Capacitance		62pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		29nS
Gate-Threshold Voltage (Maximum)		5V

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