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AP65SL130AI MOSFET Transistor

The AP65SL130AI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65SL130AI transistor as follows.

Circuit diagram symbol of the AP65SL130AI transistor

AP65SL130AI Transistor Specification

Transistor Code AP65SL130AI
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 26.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13Ohm
Power Dissipation (Maximum) PD 33.7W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 42nS
Gate-Threshold Voltage (Maximum) 5V

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