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AP65SL099DWL MOSFET Transistor

The AP65SL099DWL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65SL099DWL transistor as follows.

Circuit diagram symbol of the AP65SL099DWL transistor

AP65SL099DWL Transistor Specification

Transistor Code AP65SL099DWL
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 38A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.099Ohm
Power Dissipation (Maximum) PD 277.8W
Drain-Source Capacitance 120pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 39nS
Gate-Threshold Voltage (Maximum) 5V

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