AP65SL099DR MOSFET Transistor

The AP65SL099DR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65SL099DR transistor as follows.

AP65SL099DR Transistor Specification

Transistor Code		AP65SL099DR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.099Ohm
Power Dissipation (Maximum)	PD	277.8W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		39nS
Gate-Threshold Voltage (Maximum)		5V

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