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AP65PN2R6I MOSFET Transistor

The AP65PN2R6I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65PN2R6I transistor as follows.

Circuit diagram symbol of the AP65PN2R6I transistor

AP65PN2R6I Transistor Specification

Transistor Code AP65PN2R6I
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.6Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 25pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19nS
Gate-Threshold Voltage (Maximum) 5V

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