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AP60WN1K5J MOSFET Transistor

The AP60WN1K5J is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP60WN1K5J transistor as follows.

Circuit diagram symbol of the AP60WN1K5J transistor

AP60WN1K5J Transistor Specification

Transistor Code AP60WN1K5J
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.55Ohm
Power Dissipation (Maximum) PD 83.3W
Drain-Source Capacitance 44pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 24nS
Gate-Threshold Voltage (Maximum) 4V

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