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AP60WN1K2H MOSFET Transistor

The AP60WN1K2H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP60WN1K2H transistor as follows.

Circuit diagram symbol of the AP60WN1K2H transistor

AP60WN1K2H Transistor Specification

Transistor Code AP60WN1K2H
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 89.2W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 4V

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