AP60U02GH MOSFET Transistor

The AP60U02GH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP60U02GH transistor as follows.

AP60U02GH Transistor Specification

Transistor Code		AP60U02GH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Transistor SMD Code		60U02GH
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		3V

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