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AP60SL115AI MOSFET Transistor

The AP60SL115AI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP60SL115AI transistor as follows.

Circuit diagram symbol of the AP60SL115AI transistor

AP60SL115AI Transistor Specification

Transistor Code AP60SL115AI
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 28A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.115Ohm
Power Dissipation (Maximum) PD 33.7W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 27nS
Gate-Threshold Voltage (Maximum) 5V

UXPython is not the creator or an official representative of the AP60SL115AI MOSFET transistor. You can download the official AP60SL115AI MOSFET transistor datasheet to get more infromation about this transistor.

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