AP55T10GI MOSFET Transistor

The AP55T10GI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP55T10GI transistor as follows.

AP55T10GI Transistor Specification

Transistor Code		AP55T10GI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	31.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0165Ohm
Power Dissipation (Maximum)	PD	36.7W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		5V

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