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AP5523GM-HF MOSFET Transistor

The AP5523GM-HF is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP5523GM-HF transistor as follows.

Circuit diagram symbol of the AP5523GM-HF transistor

AP5523GM-HF Transistor Specification

Transistor Code AP5523GM-HF
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2(2.5)A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.26(0.16)Ohm
Power Dissipation (Maximum) PD 2W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3V

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