AP5322GM MOSFET Transistor

The AP5322GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP5322GM transistor as follows.

AP5322GM Transistor Specification

Transistor Code		AP5322GM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		32pF
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		3V

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