AP4P018M MOSFET Transistor

The AP4P018M is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4P018M transistor as follows.

AP4P018M Transistor Specification

Transistor Code		AP4P018M
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		285pF
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3V

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