AP4P013LES MOSFET Transistor

The AP4P013LES is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4P013LES transistor as follows.

AP4P013LES Transistor Specification

Transistor Code		AP4P013LES
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0145Ohm
Power Dissipation (Maximum)	PD	54.3W
Drain-Source Capacitance		370pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		128nS
Gate-Threshold Voltage (Maximum)		3V

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