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AP4P013LES MOSFET Transistor

The AP4P013LES is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4P013LES transistor as follows.

Circuit diagram symbol of the AP4P013LES transistor

AP4P013LES Transistor Specification

Transistor Code AP4P013LES
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0145Ohm
Power Dissipation (Maximum) PD 54.3W
Drain-Source Capacitance 370pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 128nS
Gate-Threshold Voltage (Maximum) 3V

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