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AP4N4R2H MOSFET Transistor

The AP4N4R2H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4N4R2H transistor as follows.

Circuit diagram symbol of the AP4N4R2H transistor

AP4N4R2H Transistor Specification

Transistor Code AP4N4R2H
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0042Ohm
Power Dissipation (Maximum) PD 52W
Drain-Source Capacitance 315pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 60nS
Gate-Threshold Voltage (Maximum) 3V

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