AP4N2R6MT MOSFET Transistor

The AP4N2R6MT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4N2R6MT transistor as follows.

AP4N2R6MT Transistor Specification

Transistor Code		AP4N2R6MT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0026Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		900pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		2V

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