AP4963GEM MOSFET Transistor

The AP4963GEM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4963GEM transistor as follows.

AP4963GEM Transistor Specification

Transistor Code		AP4963GEM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		180pF
Rise Time		9.5nS
Gate-Threshold Voltage (Maximum)		3V

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