AP4955GM MOSFET Transistor

The AP4955GM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4955GM transistor as follows.

AP4955GM Transistor Specification

Transistor Code		AP4955GM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1.2V

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