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AP4953GM MOSFET Transistor

The AP4953GM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4953GM transistor as follows.

Circuit diagram symbol of the AP4953GM transistor

AP4953GM Transistor Specification

Transistor Code AP4953GM
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.053Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 80pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 3V

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