AP4951GM MOSFET Transistor

The AP4951GM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4951GM transistor as follows.

AP4951GM Transistor Specification

Transistor Code		AP4951GM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.096Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		29.5nC

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