AP4880GEM MOSFET Transistor

The AP4880GEM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4880GEM transistor as follows.

AP4880GEM Transistor Specification

Transistor Code		AP4880GEM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		490pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		3V

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