AP4835GM MOSFET Transistor

The AP4835GM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4835GM transistor as follows.

AP4835GM Transistor Specification

Transistor Code		AP4835GM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	9.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		195pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.6nS

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