AP4816GSM MOSFET Transistor

The AP4816GSM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4816GSM transistor as follows.

AP4816GSM Transistor Specification

Transistor Code		AP4816GSM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		3V

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