AP4800GEM MOSFET Transistor

The AP4800GEM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4800GEM transistor as follows.

AP4800GEM Transistor Specification

Transistor Code		AP4800GEM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		105pF
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		3V

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