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AP4800AGM MOSFET Transistor

The AP4800AGM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4800AGM transistor as follows.

Circuit diagram symbol of the AP4800AGM transistor

AP4800AGM Transistor Specification

Transistor Code AP4800AGM
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 9.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.018Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 155pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 3V

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