AP4569GD MOSFET Transistor

The AP4569GD is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4569GD transistor as follows.

AP4569GD Transistor Specification

Transistor Code		AP4569GD
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		PDIP8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.8(3.8)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052(0.09)Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		70(80)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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