AP4563GM MOSFET Transistor

The AP4563GM is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4563GM transistor as follows.

AP4563GM Transistor Specification

Transistor Code		AP4563GM
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.7(6)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03(0.036)Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		165(250)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5(6)nS

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