AP4521GEH MOSFET Transistor

The AP4521GEH is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4521GEH transistor as follows.

AP4521GEH Transistor Specification

Transistor Code		AP4521GEH
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TO252-4L
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	11.7(8.7)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036(0.072)Ohm
Power Dissipation (Maximum)	PD	9W
Drain-Source Capacitance		90(80)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19.3(17)nS

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