AP4519GED MOSFET Transistor

The AP4519GED is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4519GED transistor as follows.

AP4519GED Transistor Specification

Transistor Code		AP4519GED
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		PDIP8
Drain-Source Voltage (Maximum)	VDS	35V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.2(5)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032(0.064)Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		90(115)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6(5)nS

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