AP4511GED MOSFET Transistor

The AP4511GED is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4511GED transistor as follows.

AP4511GED Transistor Specification

Transistor Code		AP4511GED
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		PDIP8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	6(5)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028(0.042)Ohm
Power Dissipation (Maximum)	PD	2W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3(2.5)V

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