AP4511GD MOSFET Transistor

The AP4511GD is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4511GD transistor as follows.

AP4511GD Transistor Specification

Transistor Code		AP4511GD
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		PDIP8
Drain-Source Voltage (Maximum)	VDS	35V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7(6.1)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025(0.04)Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		150(165)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7(6)nS

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