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AP4506GEH-HF MOSFET Transistor

The AP4506GEH-HF is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4506GEH-HF transistor as follows.

Circuit diagram symbol of the AP4506GEH-HF transistor

AP4506GEH-HF Transistor Specification

Transistor Code AP4506GEH-HF
Transistor Type MOSFET
Control Channel Type NP-Channel
Package TO252-4L
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 9(8)A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.024(0.036)Ohm
Power Dissipation (Maximum) PD 3.1W
Drain-Source Capacitance 100(220)pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18(16)nS

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