AP4453GYT MOSFET Transistor

The AP4453GYT is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4453GYT transistor as follows.

AP4453GYT Transistor Specification

Transistor Code		AP4453GYT
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PMPAK3X3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	3.13W
Drain-Source Capacitance		305pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.5nS
Gate-Threshold Voltage (Maximum)		3V

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