AP4438GYT MOSFET Transistor

The AP4438GYT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4438GYT transistor as follows.

AP4438GYT Transistor Specification

Transistor Code		AP4438GYT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK3X3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	3.57W
Drain-Source Capacitance		125pF
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3V

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