AP4419GJ MOSFET Transistor

The AP4419GJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4419GJ transistor as follows.

AP4419GJ Transistor Specification

Transistor Code		AP4419GJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	35V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.038Ohm
Power Dissipation (Maximum)	PD	34.7W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS

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