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AP4409GEP MOSFET Transistor

The AP4409GEP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4409GEP transistor as follows.

Circuit diagram symbol of the AP4409GEP transistor

AP4409GEP Transistor Specification

Transistor Code AP4409GEP
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 35V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0082Ohm
Power Dissipation (Maximum) PD 83.3W
Drain-Source Capacitance 750pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 80nS
Gate-Threshold Voltage (Maximum) 3V

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