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AP4409GEM MOSFET Transistor

The AP4409GEM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4409GEM transistor as follows.

Circuit diagram symbol of the AP4409GEM transistor

AP4409GEM Transistor Specification

Transistor Code AP4409GEM
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 35V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 14.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0075Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 860pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Total Gate Charge 55nC

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