AP4409GEM MOSFET Transistor

The AP4409GEM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4409GEM transistor as follows.

AP4409GEM Transistor Specification

Transistor Code		AP4409GEM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	35V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		860pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Total Gate Charge		55nC

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