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AP4232GM MOSFET Transistor

The AP4232GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4232GM transistor as follows.

Circuit diagram symbol of the AP4232GM transistor

AP4232GM Transistor Specification

Transistor Code AP4232GM
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.022Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 230pF
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 3V

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