AP40T10GR MOSFET Transistor

The AP40T10GR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP40T10GR transistor as follows.

AP40T10GR Transistor Specification

Transistor Code		AP40T10GR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		64nS

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