AP3R303GMT MOSFET Transistor

The AP3R303GMT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3R303GMT transistor as follows.

AP3R303GMT Transistor Specification

Transistor Code		AP3R303GMT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	31A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0033Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		440pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.5nS
Gate-Threshold Voltage (Maximum)		3V

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